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Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C
Values
... 123 D 1200 1200 50 / 40 100 / 80 20 310 - 40 . . .+150 (125) 2 500 Class F 40/125/56 50 / 40 100 / 80 550 1500 Units V V A A V W C V
SEMITRANS(R) M IGBT Modules SKM 50 GB 123 D SKM 50 GAL 123 D
Diodes
IF= - IC IFM= - ICM IFSM I2t
A A A2s
SEMITRANS 2
Characteristics
Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon 5) Eoff 5) Diodes 8) VF = VEC VF = VEC VTO rT IRRM Qrr Conditions 1) VGE = 0, IC = 1 mA VGE = VCE, IC = 2 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 40 A VGE = 15 V; IC = 50 A Tj = 25 (125) C VCE = 20 V, IC = 40 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz min. typ. max. - 6,5 1 - 200 3(3,7) - - 350 4000 600 300 30 - - - - - - 2,2 - 1,2 22 - - 0,4 0,7 0,05 Units V V mA mA nA V V S pF pF pF pF nH ns ns ns ns mWs mWs V V V m A C C/W C/W C/W GB GAL VCES - 4,5 5,5 - 0,3 - 3 - - - 2,5(3,1) - 2,7(3,5) 30 - - - - - - - - - - - - - - - - - - - - - 3300 500 220 - 70 60 400 45 7 4,5 1,85(1,6) 2,0(1,8) - - 23(35) 2,3(7) - - -

VCC = 600 V VGE = + 15 V / - 15 V3) IC = 40 A, ind. load RGon = RGoff = 27 Tj = 125 C
Features * MOS input (voltage controlled) * N channel, Homogeneous Si * Low inductance case * Very low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology * Large clearance (10 mm) and creepage distances (20 mm). Typical Applications: B 6 - 85 * Three phase inverter drives * Switching (not for linear use)
1) 2) 3) 5) 8)
IF = 40 A VGE = 0 V; IF = 50 A Tj = 25 (125) C Tj = 125 C Tj = 125 C IF = 40 A; Tj = 25 (125) C2) IF = 40 A; Tj = 25 (125) C2)
Thermal Characteristics per IGBT Rthjc per diode Rthjc per module Rthch
Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, - diF/dt = 800 A/s, VGE = 0 V Use VGEoff = -5 ... -15 V See fig. 2 + 3; RGoff = 27 CAL = Controlled Axial Lifetime Technology.
Case and mech. data B 6 - 86 SEMITRANS 2
(c) by SEMIKRON
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B 6 - 81
SKM 50 GB 123 D...
Tj = 125 C VCE = 600 V VGE = + 15 V RG = 27
Fig. 1 Rated power dissipation Ptot = f (TC)
Fig. 2 Turn-on /-off energy = f (IC)
Tj = 125 C VCE = 600 V VGE = + 15 V IC = 40 A
1 pulse TC = 25 C Tj < 150 C
Fig. 3 Turn-on /-off energy = f (RG)
ICpuls /IC
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Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
ICSC/ICN
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2,5
2
Tj < 150 C VGE = + 15 V RGoff = 27 IC = 40 A
12
10
8 1,5 6 1 4 Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s
Tj < 150 C VGE = + 15 V tsc < 10 s L < 25 nH ICN = 40 A
0,5
2
0 0 500 1000 1500
VCE [V]
0 0 500 1000 1500
VCE [V]
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit IC = f (VCE)
B 6 - 82
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(c) by SEMIKRON
Tj = 150 C VGE > 15 V
Fig. 8 Rated current vs. temperature IC = f (TC)
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Fig. 9 Typ. output characteristic, tp = 80 s; 25 C
9&( >9@ Fig. 10 Typ. output characteristic, tp = 80 s; 125 C
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Pcond(t) = VCEsat(t) . IC(t)
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t) VCE(TO)(Tj) 1,5 + 0,002 (Tj - 25) [V] typ.: rCE(Tj) = 0,02 + 0,00008 (Tj - 25) [] max.: rCE(Tj) = 0,03 + 0,00010 (Tj - 25) [] valid for VGE = + 15 +2 [V]; IC > 0,3 ICnom -1

Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations
Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V
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B 6 - 83
SKM 50 GB 123 D...
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C [nF] 100
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ICpuls = 50 A
10
VGE = 0 V f = 1 MHZ
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0
10
20
30
40 VCE [V]
Fig. 13 Typ. gate charge characteristic
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Fig. 14 Typ. capacitances vs.VCE
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WGRII
WGRQ
Tj = 125 C VCE = 600 V VGE = + 15 V RGon = 27 RGoff = 27 induct. load
WGRII
WGRQ WU
Tj = 125 C VCE = 600 V VGE = + 15 V IC = 40 A induct. load
WU
WI
WI

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Fig. 15 Typ. switching times vs. IC
Fig. 16 Typ. switching times vs. gate resistor RG
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Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 - 84
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(c) by SEMIKRON
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B 6 - 85
SKM 50 GB 123 D...
SEMITRANS 2 Case D 61 UL Recognized File no. E 63 532 SKM 50 GB 123 D
Dimensions in mm
SKM 50 GAL 123 D Case D 62 ( D 61)
Case outline and circuit diagrams
Mechanical Data
Symbol M1 M2 a w Conditions to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals US Units (M6) (M5) min. 3 27 2,5 22 - - Values typ. max. - 5 - 44 - 5 - 44 - 5x9,81 - 160 Units Nm lb.in. Nm lb.in. m/s2 g
This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Eight devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 2) Larger packaging units of 20 or 42 pieces are used if suitable Accessories B 6 - 4. SEMIBOX C - 1.
B 6 - 86
0898
(c) by SEMIKRON

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